IPI65R110CFD
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
IPI65R110CFD datasheet
-
МаркировкаIPI65R110CFD
-
ПроизводительInfineon Technologies
-
ОписаниеInfineon Technologies IPI65R110CFD RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 31.2 A Resistance Drain-Source RDS (on): 0.11 Ohms at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-262-3 Fall Time: 6 nS Gate Charge Qg: 118 nC Minimum Operating Temperature: - 55 C Power Dissipation: 277.8 W Rise Time: 11 nS Typical Turn-Off Delay Time: 68 nS Part # Aliases: IPI65R110CFDXK IPI65R110CFDXKSA1 SP000896398
-
Количество страниц20 шт.
-
Форматы файлаHTML, PDF
Где можно купить
Новости электроники
02.06.2024
01.06.2024
31.05.2024